Strain Measurement with Nanometre Resolution by Transmission Electron Microscopy
نویسندگان
چکیده
منابع مشابه
Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy.
This article deals with the measurement of strain in semiconductor heterostructures from convergent beam electron diffraction patterns. In particular, three different algorithms in the field of (circular) pattern recognition are presented that are able to detect diffracted disc positions accurately, from which the strain in growth direction is calculated. Although the three approaches are very ...
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Transmission electron microscopy (TEM) is a well-established tool for strain measurement that combines an excellent precision with a high spatial resolution. Strain maps can be obtained by different TEM techniques such as high-resolution transmission electron microscopy (HRTEM), high-resolution scanning transmission electron microscopy (HR-STEM), convergent beam electron diffraction, nanobeam e...
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High-resolution transmission electron microscopy (HRTEM) has been widely and effectively used for analyzing crystal structures and lattice imperfections in various kinds of advanced materials on an atomic scale. This is especially the case for high Tc superconductors (HTSCs). The most characteristic feature in crystal structures of HTSCs is that there is a common structural element, a CuO2 plan...
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We have shown that a scanning transmission electron microscope with a high brightness field emission source is capable of obtaining better than 3 A resolution using 30 to 40 keV electrons. Elastic dark field images of single atoms of uranium and mercury are shown which demonstrate this fact as determined by a modified Rayleigh criterion. Point-to-point micrograph resolution between 2.5 and 3.0 ...
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The dislocation shielding field at a crack tip was experimentally proven at the atomic scale by measuring the local strain in front of the crack tip using high-resolution transmission electron microscopy (HRTEM) and geometric phase analysis (GPA). Single crystalline (110) silicon wafers were employed. Cracks were introduced using a Vickers indenter at room temperature. The crack tip region was ...
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ژورنال
عنوان ژورنال: Advanced Materials Research
سال: 2014
ISSN: 1662-8985
DOI: 10.4028/www.scientific.net/amr.996.3